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| jmnic product specification silicon pnp power transistors 2SA1069 2SA1069a description ? with to-220 package ? complement to type 2sc2516/2516a ? low collector saturation voltage applications ? switching regulators ? dc-dc converters ? high-frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -80 v 2SA1069 -60 v ceo collector-emitter voltage 2SA1069a open base -80 v v ebo emitter-base voltage open collector -12 v i c collector current -5 a i cm collector current-peak -10 a i b base current -2.5 a t a =25 ?? 1.5 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220) and symbol
jmnic product specification 2 silicon pnp power transistors 2SA1069 2SA1069a characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit 2SA1069 -60 v ceo(sus) collector-emitter sustaining voltage 2SA1069a i c =-3.0a ,i b =-0.3a;l=1mh -80 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -0.6 v v besat base-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v 2SA1069 v cb =-60v; i e =0 i cbo collector cut-off current 2SA1069a v cb =-80v; i e =0 -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -10 | a h fe-1 dc current gain i c =-0.3a ; v ce =-5v 40 h fe-2 dc current gain i c =-3a ; v ce =-5v 40 200 switching times t on turn-on time 0.5 | s t stg storage time 2.5 | s t f fall time i c =-3a ; v cc =-50v i b1 =-i b2 =-0.3a;r l =17 |? 0.5 | s ? h fe-2 classifications m l k 40-80 60-120 100-200 jmnic product specification 3 silicon pnp power transistors 2SA1069 2SA1069a package outline fig.2 outline dimensions(unindicated tolerance: ? 0.10 mm) |
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